2026-06-27T10:48:16Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/596432023-08-26T04:10:03Zcom_20.500.14352_14col_20.500.14352_15
Docta Complutense
author
Rivera Calzada, Alberto Carlos
author
Santamaría Sánchez-Barriga, Jacobo
author
León Yebra, Carlos
2023-06-20T20:08:03Z
2023-06-20T20:08:03Z
2001-01-29
0003-6951
10.1063/1.1343852
https://hdl.handle.net/20.500.14352/59643
http://dx.doi.org/10.1063/1.1343852
http://scitation.aip.org/
We report on complex admittance measurements on ZrO_(2):Y_(2)O_(3) (YSZ) thin films in the parallel plate geometry. Highly textured YSZ thin films, grown by rf sputtering, allow measuring complex admittance free of the effect of charge blocking at grain boundaries. We have examined low-temperature (close to room temperature) regime dominated by association of oxygen vacancies. Complex admittance analyzed in terms of the modulus formalism supplies information on correlation effects in ion motion and allows obtaining an association energy for the oxygen vacancies of 0.45 eV, in agreement with previous theoretical calculations.
eng
Electrical conductivity relaxation in thin-film yttria-stabilized zirconia
journal article
URL
https://docta.ucm.es/bitstreams/b32f7c36-c404-458e-8302-01bc88a68d8a/download
File
MD5
248ca2c0cb9244c9d7f1198e081b5546
340550
application/pdf
LeonC107libre.pdf
URL
https://docta.ucm.es/bitstreams/6a4c65e3-d777-47c2-88be-0bebaa22dc74/download
File
MD5
7dcfc2a019c9a659b7507673b206d7f0
16257
text/plain
LeonC107libre.pdf.txt