2026-06-28T20:16:07Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/597442023-07-19T02:26:59Zcom_20.500.14352_14col_20.500.14352_15
Docta Complutense
author
Horrillo Guemes, María Carmen
author
Gutiérrez Monreal, Javier
author
Arés Escolar, Luis
author
Robla Villalba, José Ignacio
author
Sayago Olmo, Isabel
author
Getino González, José
author
Agapito Serrano, Juan Andrés
2023-06-20T20:10:22Z
2023-06-20T20:10:22Z
1994-04-15
0924-4247
10.1016/0924-4247(94)80065-0
https://hdl.handle.net/20.500.14352/59744
http://dx.doi.org/10.1016/0924-4247(94)80065-0
http://www.sciencedirect.com/
Hall effect measurement is one of the most powerful methods for obtaining information about transport mechanisms in polycrystalline semiconductor compounds that constitute the basis for understanding the sensing function of semiconductor gas sensors. The presence of grain boundaries represents the essential difference between single-crystal and polycrystalline semiconductors. The boundaries are important because they generally contain fairly high densities of interface states which trap free carriers from the bulk of the grains. In this paper the grain size of the semiconductor (calculated by the XRGA technique) and Hall effect measurements are used in order to obtain conduction-band profiles. Depending on the preparation method (reactive sputtering, electron beam, serigraphy), three types of conduction control can be distinguished. Similar results are obtained from analysis of the material microstructure.
eng
Hall effect measurements to calculate the conduction control in semiconductor films of SnO2
journal article
URL
https://docta.ucm.es/bitstreams/47b8c9b2-7c79-4644-8897-24529ef43aa8/download
File
MD5
59fb65aeadb400ad30981d7cfc679731
423862
application/pdf
HallEffectEurosensors.pdf
URL
https://docta.ucm.es/bitstreams/c0981919-2183-4e15-af8c-e40bae9e4a27/download
File
MD5
8d1b69dd9bdc9df4a8073c7a8193c7af
8
text/plain
HallEffectEurosensors.pdf.txt