2026-06-27T16:19:36Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/60682025-04-23T15:41:28Zcom_20.500.14352_14col_20.500.14352_15
Docta Complutense
author
Abad, Sara
author
Vásquez, G. Cristian
author
Vines, Lasse
author
Ranchal Sánchez, Rocío
2023-06-16T15:16:04Z
2023-06-16T15:16:04Z
2020
0167-577X
10.1016/j.matlet.2019.126949
https://hdl.handle.net/20.500.14352/6068
http://dx.doi.org/10.1016/j.matlet.2019.126949
https://www.sciencedirect.com
The aim of this work is to explore the use of thermal oxidation for the synthesis of GaFeO_3 (GFO) thin films, by employing ex situ annealed samples comprised of sputtered Fe_72Ga_28 layers deposited on top of Ga_2O_3 [1 0 0] monocrystals. To avoid Ga evaporation, Fe_72Ga_28 were capped with 60 nm-thick Mo. No surface damaged was observed when annealed between 200 degrees C and 400 degrees C. Indications of GFO formation have been obtained by X-ray diffractometry in samples with a FeGa thickness of 560 nm annealed at 300 degrees C and 400 degrees C. The hysteresis loops exhibit a coercive field close to the reported value for GFO when annealed at 400 degrees C. All the experimental results encourage the application of this growth routine to synthetize high quality GFO thin films.
eng
Atribución-NoComercial-SinDerivadas 3.0 España
Use of Ga_2O_3[100] monocrystals as substrates for the synthesis of GaFeO_3 thin films
journal article
URL
https://docta.ucm.es/bitstreams/d3107ff4-413a-4489-ad72-3218447c6ec6/download
File
MD5
375c5671aef239e527a10d7c7cfad476
899854
application/pdf
Ranchal 14 postprint+EMB_15_feb_2022+CC(nc-nd).pdf