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oai:docta.ucm.es:20.500.14352/608092024-09-10T12:25:00Zcom_20.500.14352_14col_20.500.14352_21

STM-REBIC study of nanocrystalline and crystalline silicon Nogales Díaz, Emilio Méndez Martín, María Bianchi Piqueras De Noriega, Francisco Javier Plugaru, R. © Materials Research Society Symposium on Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures (2002. Boston) Electrically active regions of nanocrystalline silicon (nc-Si) films as well as of a p-type crystalline silicon (c-Si) wafer have been investigated by using a scanning electron microscope/scanning tunneling microscope (SEM/STM) combined instrument. The nc-Si films were obtained by boron implantation of amorphous silicon layers with an average nanocrystal size of about 10 nm. STM current constant images reveal a cell structure in the nc-Si films which was also revealed in the STM remote electron beam induced current (REBIC) images with a resolution of up to 20 nm. The contrast in the STM-REBIC images indicate the existence of space charge regions at the boundaries. The influence of the thermal treatment on the cell structure was studied. For comparison, SEM-REBIC and STM-REBIC images from c-Si wafer were obtained. 2023-06-20T21:08:41Z 2023-06-20T21:08:41Z 2003 book part 1-55899-675-3 0272-9172 https://hdl.handle.net/20.500.14352/60809 http://dx.doi.org/10.1557/PROC-738-G7.6 http://journals.cambridge.org MRS Online Proceedings Library metadata only access Materials Research Society