2026-06-27T11:03:42Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/608182024-09-09T14:21:47Zcom_20.500.14352_14col_20.500.14352_21

Hidalgo Alcalde, Pedro Méndez Martín, María Bianchi Piqueras De Noriega, Francisco Javier Dutta, P. S. 2023-06-20T21:08:51Z 2023-06-20T21:08:51Z 1998 1-55899-416-5 https://hdl.handle.net/20.500.14352/60818 http://dx.doi.org/10.1557/PROC-510-639 http://journals.cambridge.org Cathodoluminescence (CL) in the scanning electron microscope (SEM) has been used to investigate the effect of doping with an isoelectronic dopant, aluminum, on the native accepters and on the general structure of extended defects of gallium antimonide single crystals. While there is no significant change in the native defect content, decoration of non-radiative recombination centers or extended defects occurs as a result of aluminum doping. metadata only access Impurity segregation in Al doped GaSb studied by cathodoluminescence microscopy book part