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Cross-sectional cathodoluminescence of GaN epitaxial films Zaldivar, M.H. Fernández Sánchez, Paloma Piqueras De Noriega, Francisco Javier 538.9 Física de materiales © Materials Research Society 1998. Symposium on Nitride Semiconductors, at the 1997 MRS Fall Meeting (1997. Boston). Cathodoluminescence (CL) in the scanning electron microscope has been used to investigate the variation along the growth axis direction of luminescence emission from epitaxial GaN films. CL spectra recorded at different positions of the sample cross-section as well as monochromatic CL images show strong spatial variations of the different luminescence emissions along the growth axis. At the buffer layer-substrate interface and at the top part of the sample, which corresponds to a Si doped epilayer, enhanced CL emission is observed as compared with the relatively low emission in the central region of the cross-section. The nature of the defects responsible for the observed CL distribution is discussed. Depto. de Física de Materiales Fac. de Ciencias Físicas TRUE pub 2023-06-20T21:09:48Z 2023-06-20T21:09:48Z 1998 book part https://hdl.handle.net/20.500.14352/60859 XXXX-XXXX 10.1557/PROC-482-703 MRS Online Proceedings Library metadata only access Materials Research Society