2026-06-01T17:57:52Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/713292024-06-11T13:50:34Zcom_20.500.14352_14col_20.500.14352_15
Impact of Dynamic Voltage Scaling on SEU Sensitivity of COTS Bulk SRAMs and A-LPSRAMs Against Proton Radiation
Clemente Barreira, Juan Antonio
Franco Peláez, Francisco Javier
Fabero Jiménez, Juan Carlos
Mecha López, Hortensia
Rezaei, Mohammadreza
Hubert, Guillaume
Martín Holgado, Pedro
COTS
SRAM
Proton tests
Radiation hardness
Reliability
Soft error
MUSCA-SEP3
Electrónica (Física)
Física nuclear
Hardware
Electrónica (Informática)
2207 Física Atómica y Nuclear
2203 Electrónica
In aerospace industry, Commercial-Off-The-Shelf (COTS) Static Random Access Memories (SRAMs) are a cost-effective solution for obtaining high performance at the system level, which is difficult to obtain using space qualified components. Additionally, the usage of Dynamic Voltage Scaling (DVS) is commonly used in space environments, where low power consumption is a critical issue. This paper presents an analysis of the sensitivity against Single Event Upsets (SEUs) of various COTS bulk SRAMs and Advanced Low-Power SRAMs against proton radiation when using DVS to save power. Experimental results will show a clear evidence that the sensitivity to SEUs increases when the power is lowered. 2 sets of successive technologies (130-nm, 90-nm and 65-nm bulk SRAMs; and 150-nm and 110-nm A-LPSRAMs) are evaluated against 15~MeV protons and compared with results of 14~MeV neutrons presented in a previous work. Experimental data are finally compared with analytical simulations obtained by using the MUSCA-SEP3 Monte-Carlo tool to predict the effect of DVS on the SEE sensitivity on more modern technologies in the ITRS/IRDS roadmap.
Ministerio de Economía, Comercio y Empresa (España)
Depto. de Estructura de la Materia, Física Térmica y Electrónica
Depto. de Arquitectura de Computadores y Automática
Fac. de Ciencias Físicas
Fac. de Informática
TRUE
pub
2023-06-22T10:40:45Z
2023-06-22T10:40:45Z
2022-01-22
journal article
https://hdl.handle.net/20.500.14352/71329
0018-9499
10.1109/TNS.2022.3140473
eng
PID2020-112916GB-I00
ESP2015-68245-C4-4-P
Clemente Barreira, J. A, et al. Impact of Dynamic Voltage Scaling on SEU Sensitivity of COTS Bulk SRAMs and A-LPSRAMs Against Proton Radiation. enero de 2022.
doi: https://hdl.handle.net/20.500.14352/71329.
Attribution-NonCommercial-NoDerivatives 4.0 International
http://creativecommons.org/licenses/by-nc-nd/4.0/
restricted access
application/pdf
IEEE-Inst Electrical Electronics Engineers Inc