2026-06-02T03:26:05Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/713772023-08-28T14:07:46Zcom_20.500.14352_14col_20.500.14352_15
Sub-nT resolution of single layer sensor based on the AMR effect in La_2/_3Sr_1/_3MnO_3 Thin Films
Enger, Luiz Guilherme
Flament, Stephane
Bhatti, Imtiaz-Noor
Guillet, Bruno
Sing, Marc Lam Chok
Pierron, Victor
Lebargy, Sylvain
Díez, Jose Manuel
Vera, Arturo
Martínez, Isidoro
Guerrero, Rubén
Pérez García, Lucas
Perna, Paolo
Camarero, Julio
Miranda, Rodolfo
González, María Teresa
Mechin, Laurence
538.9
Giant magnetoresistance
Buffer layer
Surface
Anisotropic magnetoresistance (AMR)
Functional oxide
La_2/_3Sr_1/_3MnO_3 thin film
Magnetic sensor
Planar Hall effect bridge (PHEB) sensor
Uniaxial anisotropy
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
©2022Institute of Electrical and Electronics Engineers
This work was supported by the European Union Horizon 2020 research and innovation program under Grant 737116.
Single-layer magnetoresistive sensors were designed in a Wheatstone bridge configuration using La_2/_3Sr_1/_3MnO_3 ferromagnetic oxide thin film. Uniaxial anisotropy was induced by performing epitaxial deposition of the films on top of vicinal SrTiO_3 substrate. X-ray scan confirms the high crystalline quality of the films and the magnetic anisotropy was checked by magneto-optical Kerr effect measurements. Thanks to the anisotropic magnetoresistive effect and the very low noise measured in the devices, sub-nT resolution was achieved above 100 Hz at 310 K.
Unión Europea. Horizonte 2020
Depto. de Física de Materiales
Fac. de Ciencias Físicas
TRUE
pub
2023-06-22T10:41:18Z
2023-06-22T10:41:18Z
2022-02
journal article
https://hdl.handle.net/20.500.14352/71377
0018-9464
10.1109/TMAG.2021.3089373
eng
ByAXON (737116)
open access
application/pdf
IEEE-Institute of Electrical and Electronics Engineers