2026-06-29T16:53:59Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/713772023-08-28T14:07:46Zcom_20.500.14352_14col_20.500.14352_15
Sub-nT resolution of single layer sensor based on the AMR effect in La_2/_3Sr_1/_3MnO_3 Thin Films
Enger, Luiz Guilherme
Flament, Stephane
Bhatti, Imtiaz-Noor
Guillet, Bruno
Sing, Marc Lam Chok
Pierron, Victor
Lebargy, Sylvain
Díez, Jose Manuel
Vera, Arturo
Martínez, Isidoro
Guerrero, Rubén
Pérez García, Lucas
Perna, Paolo
Camarero, Julio
Miranda, Rodolfo
González, María Teresa
Mechin, Laurence
Single-layer magnetoresistive sensors were designed in a Wheatstone bridge configuration using La_2/_3Sr_1/_3MnO_3 ferromagnetic oxide thin film. Uniaxial anisotropy was induced by performing epitaxial deposition of the films on top of vicinal SrTiO_3 substrate. X-ray scan confirms the high crystalline quality of the films and the magnetic anisotropy was checked by magneto-optical Kerr effect measurements. Thanks to the anisotropic magnetoresistive effect and the very low noise measured in the devices, sub-nT resolution was achieved above 100 Hz at 310 K.
2023-06-22T10:41:18Z
2023-06-22T10:41:18Z
2023-06-22T10:41:18Z
2022-02
journal article
https://hdl.handle.net/20.500.14352/71377
0018-9464
10.1109/TMAG.2021.3089373
eng
ByAXON (737116)
open access
IEEE-Institute of Electrical and Electronics Engineers