2026-06-27T23:52:39Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/725932024-11-28T14:51:34Zcom_20.500.14352_14col_20.500.14352_15

Algaidy, Sari Caudevilla Gutiérrez, David Pérez Zenteno, Francisco José García Hernansanz, Rodrigo García Hemme, Eric Olea Ariza, Javier San Andrés Serrano, Enrique Duarte Cano, Sebastián Siegel, J. Gonzalo, J. Pastor Pastor, David Prado Millán, Álvaro Del 2023-06-22T12:28:14Z 2023-06-22T12:28:14Z 2023-10-31 S. Algaidy, D. Caudevilla, F. Perez-Zenteno, R. García-Hernansanz, E. García-Hemme, J. Olea, E. San Andrés, S. Duarte-Cano, J. Siegel, J. Gonzalo, D. Pastor, and A. Del Prado, Materials Science in Semiconductor Processing 153, 107191 (2023). 1369-8001 10.1016/j.mssp.2022.107191 https://hdl.handle.net/20.500.14352/72593 https://doi.org/10.1016/j.mssp.2022.107191 We present a detailed investigation on the formation of supersaturated GaAs using Ti+ implantation followed by nanosecond Pulsed Laser Melting (PLM). We have synthesized high-crystal quality supersaturated GaAs layers with concentrations of Ti above the insulator to metal transition (Mott limit). The Ti-implanted concentration depth profiles after PLM obtained by Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS) show a redistribution of Ti impurities within the first hundred nanometers and superficial concentration up to 1 × 1021 redistrcm-3. Raman spectroscopy of these Ti supersaturated, and regrown GaAs samples shows a sharp crystalline peak and tensile strain due to the Ti lattice incorporation. Scanning Transmission Electron Microscopy (STEM) and high-resolution Transmission Electron Microscopy (TEM) images show a good GaAs crystallinity after the PLM process. Energy-Dispersive X-ray Spectroscopy (EDS) reveals an enhanced Ti signal inside bubble-like structures and an appearance of interface oxide layer with all processed samples. eng https://creativecommons.org/licenses/by-nc-nd/3.0/es/ open access Atribución-NoComercial-SinDerivadas 3.0 España High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs journal article