2026-08-22T19:39:22Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/728462024-09-02T15:15:26Zcom_20.500.14352_14col_20.500.14352_15

00925njm 22002777a 4500 dc García Hemme, Eric author Caudevilla Gutiérrez, Daniel author Algaidy, Sari author Pérez Zenteno, Francisco José author García Hernansanz, Rodrigo author Olea Ariza, Javier author Pastor Pastor, David author Prado Millán, Álvaro Del author San Andrés Serrano, Enrique author Martil De La Plaza, Ignacio author González Díaz, Germán author García Hemme, Eric author 2022-02 This work deepens the understanding of the optoelectronic mechanisms ruling hyperdoped-based photodevices and shows the potential of Ti hyperdoped-Si as a fully complementary metal-oxide semiconductor compatible material for room-temperature infrared photodetection technologies. By the combination of ion implantation and laser-based methods, approximate to 20 nm thin hyperdoped single-crystal Si layers with a Ti concentration as high as 10(20) cm(-3) are obtained. The Ti hyperdoped Si/p-Si photodiode shows a room temperature rectification factor at +/- 1 V of 509. Analysis of the temperature-dependent current-voltage characteristics shows that the transport is dominated by two mechanisms: a tunnel mechanism at low bias and a recombination process in the space charge region at high bias. A room-temperature sub-bandgap external quantum efficiency (EQE) extending to 2.5 mu m wavelength is obtained. Temperature-dependent spectral photoresponse behavior reveals an increase of the EQE as the temperature decreases, showing a low-energy photoresponse edge at 0.45 eV and a high-energy photoresponse edge at 0.67 eV. Temperature behavior of the open-circuit voltage correlates with the high-energy photoresponse edge. A model is proposed to relate the optoelectronic mechanisms to sub-bandgap optical transitions involving an impurity band. This model is supported by numerical semiconductor device simulations using the SCAPS software. 2199-160X 10.1002/aelm.202100788 https://hdl.handle.net/20.500.14352/72846 http://dx.doi.org/10.1002/aelm.202100788 https://onlinelibrary.wiley.com/ On the Optoelectronic Mechanisms Ruling Ti-hyperdoped Si Photodiodes