2026-08-22T19:39:09Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/728462024-09-02T15:15:26Zcom_20.500.14352_14col_20.500.14352_15

On the Optoelectronic Mechanisms Ruling Ti-hyperdoped Si Photodiodes García Hemme, Eric Caudevilla Gutiérrez, Daniel Algaidy, Sari Pérez Zenteno, Francisco José García Hernansanz, Rodrigo Olea Ariza, Javier Pastor Pastor, David Prado Millán, Álvaro Del San Andrés Serrano, Enrique Martil De La Plaza, Ignacio González Díaz, Germán García Hemme, Eric This work deepens the understanding of the optoelectronic mechanisms ruling hyperdoped-based photodevices and shows the potential of Ti hyperdoped-Si as a fully complementary metal-oxide semiconductor compatible material for room-temperature infrared photodetection technologies. By the combination of ion implantation and laser-based methods, approximate to 20 nm thin hyperdoped single-crystal Si layers with a Ti concentration as high as 10(20) cm(-3) are obtained. The Ti hyperdoped Si/p-Si photodiode shows a room temperature rectification factor at +/- 1 V of 509. Analysis of the temperature-dependent current-voltage characteristics shows that the transport is dominated by two mechanisms: a tunnel mechanism at low bias and a recombination process in the space charge region at high bias. A room-temperature sub-bandgap external quantum efficiency (EQE) extending to 2.5 mu m wavelength is obtained. Temperature-dependent spectral photoresponse behavior reveals an increase of the EQE as the temperature decreases, showing a low-energy photoresponse edge at 0.45 eV and a high-energy photoresponse edge at 0.67 eV. Temperature behavior of the open-circuit voltage correlates with the high-energy photoresponse edge. A model is proposed to relate the optoelectronic mechanisms to sub-bandgap optical transitions involving an impurity band. This model is supported by numerical semiconductor device simulations using the SCAPS software. 2023-06-22T12:34:06Z 2023-06-22T12:34:06Z 2023-06-22T12:34:06Z 2022-02 journal article https://hdl.handle.net/20.500.14352/72846 2199-160X 10.1002/aelm.202100788 eng P2018/EMT-4308 TEC2017-84378-R PID2020-116508RB-I00 PID2020-117498RB-I00 PRE2018-083798 open access Wiley