2026-06-28T10:37:20Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/74692023-07-19T05:21:24Zcom_20.500.14352_14col_20.500.14352_15

00925njm 22002777a 4500 dc Valencia-Gálvez, Paulina author Delgado, Daniel author López, María Luisa author Álvarez-Serrano, Inmaculada author Moris, Silvana author Galdámez, Antonio author 2021 Herein, we report the synthesis, characterization, and electrical properties of lead-free AgSnm[Bi1−xSbx]Se2+m (m = 1, 2) selenides. Powder X-ray diffraction patterns and Rietveld refinement data revealed that these selenides consisted of phases related to NaCl-type crystal structure. The microstructures and morphologies of the selenides were investigated by backscattered scanning electron microscopy, energy-dispersive X-ray spectroscopy, and high-resolution transmission electron microscopy. The studied AgSnm[Bi1−xSbx]Se2+m systems exhibited typical p-type semiconductor behavior with a carrier concentration of approximately ~+1020 cm−3. The electrical conductivity of AgSnm[Bi1−xSbx]Se2+m decreased from ~3.0 to ~10−3 S·cm−1 at room temperature (RT) with an increase in m from 1 to 2, and the Seebeck coefficient increased almost linearly with increasing temperature. Furthermore, the Seebeck coefficient of AgSn[Bi1−xSbx]Se3 increased from ~+36 to +50 μV·K−1 with increasing Sb content (x) at RT, while its average value determined for AgSn2[Bi1−xSbx]Se4 was approximately ~+4.5 μV·K−1. 2073-4352 10.3390/cryst11080864 https://hdl.handle.net/20.500.14352/7469 https://doi.org/10.3390/cryst11080864 AgSn[Bi1−xSbx]Se3: Synthesis, Structural Characterization, and Electrical Behavior