2026-06-08T03:46:13Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/85072024-09-02T15:16:40Zcom_20.500.14352_14col_20.500.14352_15

00925njm 22002777a 4500 dc Caudevilla Gutiérrez, Daniel author Berencen, Y. author Algaidy, Sari author Zenteno Pérez, Francisco author Olea Ariza, Javier author San Andrés Serrano, Enrique author García Hernansanz, Rodrigo author Prado Millán, Álvaro Del author Pastor Pastor, David author García Hemme, Eric author 2021 Germanium hyperdoped with deep level donors, such as tellurium, would lead to dopant-mediated sub-band gap mid-infrared photoresponse at room temperature. We use a combination of non-equilibrium techniques to supersaturate Ge with Te via ion implantation followed by pulsed laser melting (PLM). Typically, liquid N2 (77K) temperatures are used to avoid implantation-induced Ge surface porosity. In this work, alternatively, we report on the use of slightly higher implantation temperatures (143 K) together with an amorphous Si (a-Si) capping layer. We demonstrate that the solid solubility limit of Te in Ge is overcome upon recovering the crystallinity of the material after laser processing. 2643-1300 10.1109/CDE52135.2021.9455720 https://hdl.handle.net/20.500.14352/8507 https://doi.org/10.1109/CDE52135.2021.9455720 https://ieeexplore.ieee.org/abstract/document/9455720?casa_token=jWEXAmngsWAAAAAA:D5oasqyYOWiTpd5FbDJ3EyF7w_5iXoYz7vWZPWDb_VecRARvsf8mkVGKecCXyZ-V_QBb9xxhjAs Overcoming the solid solubility limit of Te in Ge by ion implantation and pulsed laser melting recrystallization