<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-06-08T07:25:58Z</responseDate><request verb="GetRecord" identifier="oai:docta.ucm.es:20.500.14352/8507" metadataPrefix="oai_dc">https://docta.ucm.es/rest/oai/request</request><GetRecord><record><header><identifier>oai:docta.ucm.es:20.500.14352/8507</identifier><datestamp>2024-09-02T15:16:40Z</datestamp><setSpec>com_20.500.14352_14</setSpec><setSpec>col_20.500.14352_15</setSpec></header><metadata><oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
   <dc:title>Overcoming the solid solubility limit of Te in Ge by ion implantation and pulsed laser melting recrystallization</dc:title>
   <dc:creator>Caudevilla Gutiérrez, Daniel</dc:creator>
   <dc:creator>Berencen, Y.</dc:creator>
   <dc:creator>Algaidy, Sari</dc:creator>
   <dc:creator>Zenteno Pérez, Francisco</dc:creator>
   <dc:creator>Olea Ariza, Javier</dc:creator>
   <dc:creator>San Andrés Serrano, Enrique</dc:creator>
   <dc:creator>García Hernansanz, Rodrigo</dc:creator>
   <dc:creator>Prado Millán, Álvaro Del</dc:creator>
   <dc:creator>Pastor Pastor, David</dc:creator>
   <dc:creator>García Hemme, Eric</dc:creator>
   <dc:subject>537</dc:subject>
   <dc:subject>Ion implantation</dc:subject>
   <dc:subject>PLM</dc:subject>
   <dc:subject>Germanium</dc:subject>
   <dc:subject>Tellurium</dc:subject>
   <dc:subject>Capping layer</dc:subject>
   <dc:subject>Electrónica (Física)</dc:subject>
   <dc:subject>Física del estado sólido</dc:subject>
   <dc:subject>2211 Física del Estado Sólido</dc:subject>
   <dc:description>©IEEE.
Spanish Conference on Electron Devices (CDE) (13.2021. Sevilla)
This work is part of the project TEC2017-84378-R, funded by MICINN and European Social Fund and project MADRID-PV2 (P2018/EMT-4308) funded by the Comunidad Autónoma de Madrid with the support from FEDER Funds. Parts of this research were carried out at IBC at the Helmholtz–Zentrum Dresden–Rossendorf e. V., a member of the Helmholtz Association. Authors would like to thank Ulrich Kentsch for his assistance with the lowtemperature implantations. D. Caudevilla would also acknowledge grant PRE2018-083798, financed by MICINN and European Social Fund. D. Pastor acknowledges financial support from the program Ramón y Cajal (Grant No. RYC2014-16936).</dc:description>
   <dc:description>Germanium hyperdoped with deep level donors,
such as tellurium, would lead to dopant-mediated sub-band gap mid-infrared photoresponse at room temperature. We use a
combination of non-equilibrium techniques to supersaturate Ge with Te via ion implantation followed by pulsed laser melting (PLM). Typically, liquid N2 (77K) temperatures are used to avoid implantation-induced Ge surface porosity. In this work, alternatively, we report on the use of slightly higher implantation temperatures (143 K) together with an amorphous Si (a-Si) capping layer. We demonstrate that the solid solubility limit of Te in Ge is overcome upon recovering the crystallinity of the material after laser processing.</dc:description>
   <dc:description>Ministerio de Ciencia e Innovación (MICINN)</dc:description>
   <dc:description>Comunidad de Madrid/FEDER</dc:description>
   <dc:description>Programa Ramón y Cajal</dc:description>
   <dc:description>Depto. de Estructura de la Materia, Física Térmica y Electrónica</dc:description>
   <dc:description>Fac. de Ciencias Físicas</dc:description>
   <dc:description>TRUE</dc:description>
   <dc:description>pub</dc:description>
   <dc:date>2023-06-17T09:16:09Z</dc:date>
   <dc:date>2023-06-17T09:16:09Z</dc:date>
   <dc:date>2021</dc:date>
   <dc:type>journal article</dc:type>
   <dc:identifier>https://hdl.handle.net/20.500.14352/8507</dc:identifier>
   <dc:identifier>2643-1300</dc:identifier>
   <dc:identifier>10.1109/CDE52135.2021.9455720</dc:identifier>
   <dc:language>eng</dc:language>
   <dc:relation>(TEC2017-84378-R; PRE2018-083798)</dc:relation>
   <dc:relation>MADRID-PV2 (P2018/EMT-4308)</dc:relation>
   <dc:relation>RYC- 2014-16936</dc:relation>
   <dc:rights>Atribución-NoComercial-SinDerivadas 3.0 España</dc:rights>
   <dc:rights>https://creativecommons.org/licenses/by-nc-nd/3.0/es/</dc:rights>
   <dc:rights>open access</dc:rights>
   <dc:format>application/pdf</dc:format>
   <dc:publisher>IEEE</dc:publisher>
</oai_dc:dc></metadata></record></GetRecord></OAI-PMH>