2026-06-28T20:14:31Zhttps://docta.ucm.es/rest/oai/request
oai:docta.ucm.es:20.500.14352/888062025-08-28T15:54:47Zcom_20.500.14352_14col_20.500.14352_15
Docta Complutense author García Hernansanz, Rodrigo author Pérez Zenteno, Francisco José author Duarte Cano, Sebastián author Caudevilla Gutiérrez, Daniel author Algaidy, Sari author García Hemme, Eric author Olea Ariza, Javier author Pastor Pastor, David author Prado Millán, Álvaro Del author San Andrés Serrano, Enrique author Martil De La Plaza, Ignacio author Ros, Eloy author Puigdollers, Joaquim author Ortega, Pablo author Voz, Cristobal 2023-11-17T19:02:21Z 2023-11-17T19:02:21Z 2023 R. García-Hernansanz, F. Pérez-Zenteno, S. Duarte-Cano, D. Caudevilla, S. Algaidy, E. García-Hemme, J. Olea, D. Pastor, A. del Prado, E. S. Andrés, I. Mártil, E. Ros, J. Puigdollers, P. Ortega, and C. Voz, IEEE Journal of Photovoltaics 13, 656 (2023). 2156-3381 10.1109/JPHOTOV.2023.3295494 https://hdl.handle.net/20.500.14352/88806 2156-3403 http://dx.doi.org/10.1109/JPHOTOV.2023.3295494 https://ieeexplore.ieee.org/abstract/document/10190068 In this article, we study the effect of the inversion charge ( Q _inv ) in a solar cell based on the hole-selective characteristic of substoichiometric molybdenum oxide (MoO_x ) and vanadium oxide (VO_x ) deposited directly on n-type silicon. We measure the capacitance–voltage ( C – V ) curves of the solar cells at different frequencies and explain the results taking into account the variation of the space charge and the existence of Q_inv in the c-Si inverted region. The high-frequency capacitance measurements follow the Schottky metal–semiconductor theory, pointing to a low inversion charge influence in these measurements. However, for frequencies lower than 20 kHz, an increase in the capacitance is observed, which we relate to the contribution of the inversion charge. In addition, applying the metal–semiconductor theory to the high-frequency measurements, we have obtained the built-in voltage potential and show new evidence about the nature of the conduction process in this structure. This article provides a better understanding of the transition metal oxide/n-type crystalline silicon heterocontact. eng Inversion charge study in TMO hole-selective contact based solar cells journal article 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