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oai:docta.ucm.es:20.500.14352/98211.22025-08-28T13:46:26Zcom_20.500.14352_14col_20.500.14352_15

00925njm 22002777a 4500 dc Feijoo, Pedro Carlos author Kauerauf, Thomas author Toledano-Luque, María author Togo, Misuhiro author San Andrés Serrano, Enrique author Groeseneken, Guido. author 2012 In this paper, the time-dependent dielectric breakdown (TDDB) in sub-1-nm equivalent oxide thickness (EOT) n-type bulk FinFETs is studied. The gate stacks consist of an IMEC clean interfacial layer, atomic layer deposition HfO2 high-kappa and TiN metal electrode. For the 0.8-nm EOT FinFETs, it is found that TDDB lifetime is consistent with results of planar devices for areas around 10(-8) cm(2), implying that the FinFET architecture does not seem to introduce new failure mechanisms. However, for devices with smaller area, the extrapolated voltage at a ten-year lifetime for soft breakdown (SBD) does not meet the specifications, and as a consequence, the SBD path wear-out will have to be included in the final extrapolation. Furthermore, it is shown that for EOTs smaller than 0.8 nm, the TDDB reliability on n-type FinFETs is challenged by the high leakage currents. 1530-4388 https://hdl.handle.net/20.500.14352/98211.2 1558-2574 https://doi.org/10.1109/TDMR.2011.2180387 Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs