2026-08-20T02:02:37Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/98211.22025-08-28T13:46:26Zcom_20.500.14352_14col_20.500.14352_15

Feijoo, Pedro Carlos Kauerauf, Thomas Toledano-Luque, María Togo, Misuhiro San Andrés Serrano, Enrique Groeseneken, Guido. 2024-11-14T12:58:16Z 2024-02-02T11:38:48Z 2012 1530-4388 https://hdl.handle.net/20.500.14352/98211.2 1558-2574 https://doi.org/10.1109/TDMR.2011.2180387 In this paper, the time-dependent dielectric breakdown (TDDB) in sub-1-nm equivalent oxide thickness (EOT) n-type bulk FinFETs is studied. The gate stacks consist of an IMEC clean interfacial layer, atomic layer deposition HfO2 high-kappa and TiN metal electrode. For the 0.8-nm EOT FinFETs, it is found that TDDB lifetime is consistent with results of planar devices for areas around 10(-8) cm(2), implying that the FinFET architecture does not seem to introduce new failure mechanisms. However, for devices with smaller area, the extrapolated voltage at a ten-year lifetime for soft breakdown (SBD) does not meet the specifications, and as a consequence, the SBD path wear-out will have to be included in the final extrapolation. Furthermore, it is shown that for EOTs smaller than 0.8 nm, the TDDB reliability on n-type FinFETs is challenged by the high leakage currents. eng open access Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs journal article