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00925njm 22002777a 4500 dc Pampillón. María Ángela author Feijoo, Pedro Carlos author San Andrés Serrano, Enrique author Lucía Mulas, María Luisa author Prado Millán, Álvaro Del author Toledano-Luque, María author 2011 Thin gadolinium metallic layers were deposited by high-pressure sputtering in pure Ar atmosphere. Subsequently, in situ thermal oxidation was performed at temperatures ranging from 150 to 750 °C. At an oxidation temperature of 500 °C the films show a transition from monoclinic structure to a mixture of monoclinic and cubic. Regrowth of interfacial SiOx is observed as temperature is increased, up to 1.6 nm for 750 °C. This temperature yields the lowest interface trap density, 4 × 1010 eV−1 cm−2, but the effective permittivity of the resulting dielectric is only 7.4. The reason of this low value is found on the oxidation mechanism, which yields a surface with located bumps. These bumps increase the average thickness, thus reducing the capacitance and therefore the calculated permittivity. Pampillón, M. A., et al. «Anomalous Thermal Oxidation of Gadolinium Thin Films Deposited on Silicon by High Pressure Sputtering». Microelectronic Engineering, vol. 88, n.o 9, septiembre de 2011, pp. 2991-96. DOI.org (Crossref), https://doi.org/10.1016/j.mee.2011.04.058. 0167-9317 10.1016/j.mee.2011.04.058 https://hdl.handle.net/20.500.14352/99145 1873-5568 https://doi.org/10.1016/j.mee.2011.04.058 Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering