Velazco, RaoulClemente Barreira, Juan AntonioHubert, GuillaumeMansour, WassimPalomar Trives, CarlosFranco Peláez, Francisco JavierBaylac, MaudRey, SolenneRosetto, OlivierVilla, Francesca2023-06-192023-06-192014-120018-949910.1109/TNS.2014.2363899https://hdl.handle.net/20.500.14352/33823(c) 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.Radiation tests with 15-MeV neutrons were performed in a COTS SRAM including a new memory cell design combining SRAM cells and DRAM capacitors to determine if, as claimed, it is soft-error free and to estimate upper bounds for the cross-section. These tests led to cross-section values two orders of magnitude below those of typical CMOS SRAMs in the same technology node. MUSCA SEP3 simulations complement these results predicting that only high-energy neutrons ( > 30 MeV) can provoke bit flips in the studied SRAMs. MUSCA SEP3 is also used to investigate the sensitivity of the studied SRAM to radioactive contamination and to compare it with the one of standard CMOS SRAMs. Results are useful to make predictions about the operation of this memory in environments such as avionics.engEvidence of the robustness of a COTS soft-error free SRAM to neutron radiationjournal articlehttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6940331&tag=1open access537.8CMOS integrated circuitsDRAM chipsSRAM chipsCapacitorsContaminationNeutron effectsRadiation hardening (electronics)CMOS SRAMCOTS soft-error free SRAMDRAM capacitorsMUSCA SEP3 simulationsSRAM cellsCross-section valuesElectron volt energy 15 MeVHigh-energy neutronsMemory cell designNeutron radiationRadiation testsRadioactive contaminationError analysisNeutronsReliabilitySingle event upsetsCOTSLPSRAMMUSCA SEP3SRAMNeutron testsRadiation hardnessSoft errorElectrónica (Física)Circuitos integrados2203.07 Circuitos Integrados