Panin, G. N.Díaz-Guerra Viejo, CarlosPiqueras De Noriega, Francisco Javier2023-06-202023-06-201998-04-210003-695110.1063/1.121298https://hdl.handle.net/20.500.14352/59142© 1998 American Institute of Physics. This work was supported by DGICYT (Project PB93-1256) and by CICYT (Project IN93-0012). The help of Professor A. M. Baro´, Dr. A. Asenjo, and Dr. J. Gómez-Herrero is greatfully acknowledged. G. Panin thanks Spanish MEC for a research grant.A correlative study of the electrically active defects of CdxHg1-xTe and CdTe crystals has been carried out using a scanning electron microscope/scanning tunneling microscope (SEM/STM) combined system. Charged structural and compositional defects were revealed by the remote electron beam induced current (REBIC) mode of the scanning electron microscope. The electronic inhomogeneities of the samples were analyzed with nm resolution by current imaging tunneling spectroscopy (CITS) measurements, which showed the existence of built-in electrostatic barriers as well as local variations of the surface band gap in the defect areas imaged by REBIC.engjournal articlehttp://dx.doi.org/10.1063/1.121298http://scitation.aip.orgopen access538.9Si(111)2x1 SurfaceMicroscopyCathodoluminescenceCdte(001)Física de materiales