Abuín Herráez, Manuel2023-06-182023-06-182015-05-13Srour, W., et al. «Ultrafast Atomic Diffusion Inducing a Reversible ( 2 3 × 2 3 ) R 30 ° ↔ ( 3 × 3 ) R 30 ° Transition on Sn / Si ( 111 ) ∶ B». Physical Review Letters, vol. 114, n.o 19, mayo de 2015, p. 196101. DOI.org (Crossref), https://doi.org/10.1103/PhysRevLett.114.196101.0031-900710.1103/PhysRevLett.114.196101https://hdl.handle.net/20.500.14352/23154© 2015 American Physical Society. This work was supported by the French Agence Nationale de la Recherche (ANR) under Contract SurMott, No. NT-09-618999, and by Spanish Ministerio de Economía y Competitividad, Project No. MAT2014-59966-R. W. S. and D. G. T. contributed equally to this work. Articulo firmado por más de 10 autores.Dynamical phase transitions are a challenge to identify experimentally and describe theoretically. Here, we study a new reconstruction of Sn on silicon and observe a reversible transition where the surface unit cell divides its area by a factor of 4 at 250 degrees C. This phase transition is explained by the 24-fold degeneracy of the ground state and a novel diffusive mechanism, where four Sn atoms arranged in a snakelike cluster wiggle at the surface exploring collectively the different quantum mechanical ground states.engjournal articlehttp://dx.doi.org/10.1103/PhysRevLett.114.196101http://journals.aps.orgopen access538.9Charge-density-wavePhase-transitionSemiconductor surfaceSuperconductivitySn/Ge(Iii)OrderMetalFísica de materiales