Scigaj, M.Dix, N.Cabero Piris, MarionaRivera Calzada, Alberto CarlosSantamaría Sánchez-Barriga, JacoboFontcuberta, J.2023-06-192023-06-192014-06-230003-695110.1063/1.4885089https://hdl.handle.net/20.500.14352/34929© 2014 AIP Publishing LLC. Financial support by the Spanish Government [Project Nos. MAT2011-29269-CO3 and NANOSELECT CSD2007- 00041] and Generalitat de Catalunya (No. 2009 SGR 00376) is acknowledged.We show that yttria-stabilized zirconia (YSZ) films deposited on structurally dissimilar SrTiO_(3)(110) substrates exhibit two-dimensional layer-by-layer growth. We observed that, up to a thickness of about 15 nm, the square (001) basal plane of the cubic YSZ grows epitaxially on the rectangular (110) crystallographic plane of SrTiO3 substrates, with [110]YSZ(001)//[001]SrTiO_(3)(110) epitaxial relationship. Thus, the heterointerface presents symmetry discontinuity between the YSZ(001) film and the lower surface symmetry SrTiO_(3)(110) substrate. Beyond this specific case, we envisage similar approaches to develop other innovative oxide interfaces showing similar crystal symmetry discontinuities.engjournal articlehttp://dx.doi.org/10.1063/1.4885089http://scitation.aip.org/open access537Thin-filmsHeterostructuresGrowth.ElectricidadElectrónica (Física)2202.03 Electricidad