Hidalgo Alcalde, PedroPalais, O.Martinuzzi, S.2023-06-202023-06-2020040953-898410.1088/0953-8984/16/2/003https://hdl.handle.net/20.500.14352/51060© 2004 IOP Publishing Ltd. International Workshop on Beam Injection Assessment of Microstructures in Semconductors. (7. 2003. Lille. Francia). This work was sponsored by CNRS/ADEME (France), by Conseils Regional (PACA) and General (13)-France and by Secretaria General Educacion y Universidades (Spain).By means of a contactless microwave phase shift technique, the minority carrier lifetime and surface recombination velocity were measured in multicrystalline silicon wafers containing iron and chromium. The bulk lifetime can be deduced, leading to the determination of the concentration of interstitial iron [Fe-i] associated with boron, after pair dissociation annealing at 210 degreesC. It is found that [Fe-i] is higher in the vicinity of extended defects but decreases at the defects because the iron segregates irrespective of boron concentration and does not form pairs.engjournal articlehttp://dx.doi.org/10.1088/0953-8984/16/2/003http://iopscience.iop.orgopen access538.9RecombinationFísica de materiales