Anomalous resistivity at the structural phase transition of polycrystalline SnTe

Grassie, Alexander D. C.Agapito Serrano, Juan AndrésGonzalez Espeso, Pablo2023-06-212023-06-2119790022-3719https://hdl.handle.net/20.500.14352/65103@ 1979 The Institute of PhysicsAn excess resistivity has been observed in thin film polycrystalline samples of SnTe with low carrier concentration and is attributed to the additional scattering due to the phonon softening associated with the structural phase transition.engAnomalous resistivity at the structural phase transition of polycrystalline SnTejournal articlehttp://iopscience.iop.org/0022-3719/12/24/001http://iopscience.iop.orgopen access537621.38538.9ResistivitySemiconductorsSnTeTemperature dependenceElectrónica (Física)Física de materiales