Plugaru, R.Méndez Martín, María BianchiPiqueras De Noriega, Francisco JavierTate, T.J.2023-06-202023-06-202002-12-160953-898410.1088/0953-8984/14/48/363https://hdl.handle.net/20.500.14352/58919© 2002 IOP Publishing Ltd. This work has been supported byMCYT (ProjectMAT2000-2119). RP acknowledgesMECD for the research grant SB2000-0164. Conference on Extended Defects in Semiconductors (EDS 2002)(2002. Bologna, Italia)Visible luminescence of amorphous silicon layers either implanted with Er or co-implanted with Er and O and subsequently annealed in nitrogen has been investigated by cathodoluminescence (CL) in a scanning electron microscope. Co-implanted samples show a more intense luminescence, which is revealed by annealing at lower temperatures than the samples implanted only with erbium. Thermal treatments cause the formation of erbium oxide as well as Er-Si complexes or precipitates. Violet-blue luminescence has been found from CL images and spectra to be related to Er-Si precipitates. Emission in the green-red range is attributed to oxide species.engjournal articlehttp://iopscience.iop.org/0953-8984/14/48/363http://iopscience.iop.orgopen access538.9Erbium LuminescenceAmorphous-SiliconCrystal SiliconPorous SiliconExcitationCathodoluminescencePhotoluminescenceFilmsSegregationEpitaxyFísica de materiales