Domínguez-Adame Acosta, FranciscoPiqueras De Noriega, Francisco JavierDe Diego, N.LLopis, J.2023-06-202023-06-201988-04-150021-897910.1063/1.340994https://hdl.handle.net/20.500.14352/59309© American Institute of Physics. The authors thank Wacker-Chemitronic (DR. K. Löhnert) for providing the samples. The help of P. Fernández is acknowledgedCathodoluminescencescanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaP wafers. The results show the existence of a gradient of the concentration of vacancy‐type defects along the wafer diameter, which causes inhomogeneity in the emission. Dislocation density and vacancy concentration profiles have been compared.engjournal articlehttp://dx.doi.org/10.1063/1.340994http://scitation.aip.orgopen access538.9PhysicsAppliedFísica de materiales