Iribarren, A.Fernández Sánchez, PalomaPiqueras De Noriega, Francisco Javier2023-06-192023-06-1920140370-197210.1002/pssb.201248600https://hdl.handle.net/20.500.14352/33549(C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This research was partially supported by MCINN (Projects MAT2009-07882, MAT2012-31959 and CSD2009-00013).Cathodoluminescence (CL) of Te doped elongated ZnO microstructures obtained by a vapour-solid (V-S) technique has been investigated. The CL intensity changes along the microstructures axis are related to the gradient of Te content, which influences the intensity of the ZnO deep-level (DL) emission band. The main defects are vacancy complexes which are partially passivated by the isoelectronic Te doping. The weight on the total luminescence of the radiative processes related to defects has been estimated. A straightforward method based on the measurement of the band-to-band luminescence intensity under constant excitation and experimental conditions has been used. The recombination lifetimes for transition through defect levels were also estimated. [GRAPHICS] SEM image and cathodoluminescence emission of needle- and pencil-like TeO2-doped ZnO microstructures.journal articlehttp://dx.doi.org/10.1002/pssb.201248600http://onlinelibrary.wiley.comrestricted access538.9Point-DefectsThin-FilmsLuminescenceCathodoluminescencePhotoluminescencePhotoconductivitySemiconductorsEpilayersZnteFísica de materiales