Mártil de la Plaza, IgnacioGonzález Díaz, GermánPrado Millán, Álvaro del2023-06-202023-06-201999-04[1] S.V. Hattangady, H. Niimi, G. Lucovsky, J. Vac. Sci. Technol. A, 14 (6) (1996), p. 3017. [2] J.-I. Yeh, S.-C. Lee, J. Appl. Phys., 79 (2) (1996), p. 656. [3] S. García, J.M. Martín, M. Fernández, I. Mártil, G. González-Díaz, Phil. Mag. B, 73 (3) (1996), p. 487. [4] F.L. Martínez, I. Mártil, G. González-Díaz, B. Selle, I. Sieber, J. Non-Cryst. Solids, 227–230 (1998), p. 523. [5] S. García, J.M. Martín, I. Mártil, G. González-Díaz, Thin Solid Films, 315 (1998), p. 22. [6] W.A. Lanford, M.J. Rand, J. Appl. Phys., 49 (4) (1978), p. 2473. [7] L.-N. He, T. Inokuma, S. Hasegawa, Jpn. J. Appl. Phys., 35 (1996), p. 1503. [8] D.V. Tsu, G. Lucovsky, M.J. Mantini, S.S. Chao, J. Vac. Sci. Technol. A, 5 (4) (1987), p. 1998. [9] P.V. Bulkin, P.L. Swart, B.M. Lacquet, J. Non-Cryst. Solids, 187 (1995), p. 484. [10] S. García, J.M. Martín, I. Mártil, G. González-Díaz, Thin Solid Films, 317 (1998), p. 116. [11] Y. Ma, G. Lucovsky, J. Vac. Sci. Technol. B, 12 (4) (1994), p. 2504.0040-609010.1016/S0040-6090(98)01701-5https://hdl.handle.net/20.500.14352/59283International Vacuum Congress (14. 1999. Birmingham, Inglaterra) / International Conference on Solid Surfaces (10. 1999. Birmingham, Inglaterra) / International Conference on Nanometre-Scale Science and Technology (5. 1999. Birmingham, Inglaterra) / International Conference on Quantitative Surface Analysis (10. 1999. Birmingham, Inglaterra). © Elsevier Science SA.Silicon oxynitride films were deposited at room temperature using the ECR-PECVD technique. Precursor gases were O(2), N(2) and SiH(4). The composition of the films can be controlled by regulating the gases flow ratio. R = (O(2) + N(2))/SiH(4) and R' = O(2)/SiH(4) have proved to be the key deposition parameters. FTIR spectroscopy, AES and ellipsometric measurements were performed in order to characterise the films. A single Si-O/Si-N stretching band is observed in the FTIR spectrum for all compositions, indicating single-phase homogeneous SiO(x)N(y) films. FWHM of the stretching band shows a maximum for the composition corresponding to the same number of Si-O and Si-N bonds. Samples cover the whole composition range from silicon nitride to silicon oxide including nitrogen-rich films, even though the gas flow ratio R " = N(2)/O(2) during deposition was small (from R " = 1.0 for SiO(1.9)N(0.04) to R " I = 6.7 for SiO(0.26)N(1.2)). Silicon oxide composition samples (SiO(2.0)) show essentially the same TR features as the thermal oxide: Si-O stretching band located at 1072 cm(-1), with a FWHM of 96 cm(-1) and a shoulder/peak ratio of 0.30, while nitrogen-rich samples (SiO(0.26)N(1.2)) show a total bonded hydrogen content below 2 x 10(22) cm(-3).engjournal articlehttp://dx.doi.org/10.1016/S0040-6090(98)01701-5http://www.sciencedirect.comopen access537Chemical-Vapor-DepositionResonance Plasma Method.ElectricidadElectrónica (Física)2202.03 Electricidad