O'Donnell, KPKatchkanova, V.Wang, K.Martin, R.W.Edwards, P.R.Hourahine, B.Nogales Díaz, EmilioMosselmans, J.F.W.De Vries, B.2023-06-202023-06-2020051-55899-779-210.1557/proc-831-e9.6https://hdl.handle.net/20.500.14352/53572© Materials Research Society. ESSN: 1946-4274 Symposium on GaN, AIN, InN and Their Alloys. (2004. Boston) We are grateful to the European Union for supporting this work unde Contract HRPN-CT-2001-00297This presentation reviews recent lattice location studies of rare earth (RE) ions in GaN by electron emission channelling (EC) and X-ray absorption fine structure (XAFS) techniques. These studies agree that RE ions at low concentrations (whether they are incorporated during growth or introduced later by ion implantation) predominantly occupy Ga substitutional sites, as expected from considerations of charge equivalence. We combine this result with some examples of the well-documented richness of optical spectra of GaN:RE3+ to suggest that the luminescence of these materials may be ascribed to a family of rather similar sites, all of which feature the REGa defect.engbook parthttp://dx.doi.org/10.1557/proc-831-e9.6https://www.cambridge.orgopen access538.9Doped ganPhotoluminescenceErFísica de materialesFísica del estado sólido2211 Física del Estado Sólido