Maestre Varea, DavidCremades Rodríguez, Ana IsabelPiqueras de Noriega, Javier2023-06-202023-06-2020041. G. Martinelli, M. C. Carotta, E. Traversa, and G. Ghiotti, MRS Bull. 24, 30 (1999). 2. C. Xu, J. Tamaki, N. Miura, and N. Yamazoe, Sens. Actuators B 3, 147 (1991). 3. H. J. Van Daal, Solid State Commun. 6, 5 (1968). 4. J. P. Fillard and M. de Murcia, Phys. Status Solidi A 30, 279 (1975). 5. S. S. Chang and D. K. Park, Mater. Sci. Eng., B 95, 55 (2002). 6. J. M. Themlin, R. Sporken, J. Darville, R. Caudano, and J. M. Gilles, Phys. Rev. B 42, 11914 (1990). 7. D. F. Crabtree, J. Phys. D 7, L22 (1974). 8. D. F. Crabtree, J. Phys. D 7, L17 (1974). 9 .E. De Fre´sart, J. Darville, and J. M. Gilles, Surf. Sci. 126, 518 (1983). 10. D. F. Cox, T. B. Fryberger, and S. Semancik, Phys. Rev. B 38, 2072 (1988). 11. A. Urbieta, P. Ferna´ndez, Ch. Hardalov, J. Piqueras, and T. Sekiguchi, Mater. Sci. Eng., B 91–92, 345 (2002). 12.P. R. Bueno, E. R. Leite, M. M. Oliveira, M. O. Orlandi, and E. Longo, Appl. Phys. Lett. 79, 48 (2001). 13. R. Radoi, P. Ferna´ndez, J. Piqueras, M. Wiggins, and J. Solís, Nanotechnology 14, 794 (2003). 14. C. C. Koch, Nanostruct. Mater. 2, 109 (1993). 15 C. Díaz-Guerra, A. Montone, J. Piqueras, and F. Cardellini, Semicond. Sci. Technol. 17, 77 (2002). 16 E. Nogales, A. Montone, F. Cardellini, B. Méndez, and J. Piqueras, Semicond. Sci. Technol. 17, 1267 (2002).0-7803-8166-1https://hdl.handle.net/20.500.14352/53299© 2004 American Institute of Physics. International Conference on Microelectronics (24. 2004.Nis, Servia). This work has been supported by MCYT (Project No. MAT 2000-2119). D. M. acknowledges a grant from MCYT.Cathodoluminescence (CL) and remote electron beam induced current (REBIC) in the scanning electron microscope (SEM) has been used to investigate the electron recombination mechanisms in tin oxide. Sintered material prepared from high purity powder has been found to show a strong dependence of the CL emission on the thermal treatments applied during sample preparation. SEM images show the presence of nano and microcrystalline grains. The correlation of the grain size and morphology with the optical emission is analysed by CL microscopy and spectroscopy. The evolution of the luminescence bands with mechanical milling shows a complex evolution of the 1.94 eV and 2.58 eV emissions which is explained by formation and recovery of defects during milling. REBIC measurements and imaging are used to characterize the formation of a potential barrier at the grain boundaries.engbook parthttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1314854http://ieeexplore.ieee.orgopen access538.9Grain-BoundariesSurfaceFísica de materiales