García-Fernández, JavierTorres Pardo, María De La AlmudenaRamírez Castellanos, JulioRossell, Marta D.González Calbet, José María2023-06-172023-06-1720212079-499110.3390/nano11010198https://hdl.handle.net/20.500.14352/7489The optimization of novel transparent conductive oxides (TCOs) implies a better understanding of the role that the dopant plays on the optoelectronic properties of these materials. In this work, we perform a systematic study of the homologous series ZnkIn2Ok+3 (IZO) by characterizing the specific location of indium in the structure that leads to a nanodomain framework to release structural strain. Through a systematic study of different terms of the series, we have been able to observe the influence of the k value in the nano-structural features of this homologous series. The stabilization and visualization of the structural modulation as a function of k is discussed, even in the lowest term of the series (k = 3). The strain fields and atomic displacements in the wurtzite structure as a consequence of the introduction of In3+ are evaluated.engAtribución 3.0 Españahttps://creativecommons.org/licenses/by/3.0/es/journal articlehttps://doi.org/10.3390/nano11010198open access546nano-characterization(Cs)-corrected electron microscopygeometric phase analysisZnkIn2Ok+3 homologous seriesQuímica inorgánica (Química)2303 Química Inorgánica