Pereira, Daniela R.Bouhafs, ChamseddineVerheij, DirkjanDíaz-Guerra Viejo, CarlosVázquez, LuisPeres, MarcoCardoso, SusanaFreitas, Paulo P.Lorenz, Katharina2026-02-172026-02-172025R. Pereira, D., C. Bouhafs, D. Verheij, C. Díaz‐Guerra, L. Vázquez, M. Peres, S. Cardoso, P. P. Freitas, and K. Lorenz, 2025, Field Effect Transistors Based on α‐MoO3 Exfoliated Crystals: Fabrication, Functionalization and Characterization, Physica Rapid Research Ltrs, 2500104, doi: 10.1002/pssr.202500104.1862-625410.1002/pssr.202500104https://hdl.handle.net/20.500.14352/132523© 2025 Wiley-VCH GmbH. PD/BD/143017/2018α-MoO3 field effect transistors (FETs), exhibiting n-type behavior, are fabricated. These devices are based on α-MoO3 exfoliated crystals, which are produced from bulk crystals by mechanical exfoliation and then transferred onto Si/SiO2 substrates, through a two-step clean transfer process. The FET devices are then achieved by depositing three electrical contacts in a bottom-gate geometry, using photolithography, metal sputtering deposition, and lift-off. Thermal treatments in different atmospheres (vacuum and air) are performed to tune the electrical properties of the channel material by controlling the oxygen vacancy concentration. Preliminary electrical characterization of a modified device reveals a modulation of channel resistance with the gate bias, in agreement with the characteristic n-type behavior of α-MoO3. Notably, it exhibits a promising electron mobility value of ≈0.117 cm2 V−1 s−1, which is comparable to values reported for n-type FETs based on a single/few atomic layers of α-MoO3 and MoS2. Additionally, the transfer curves exhibit anticlockwise hysteresis effects, likely attributed to the adsorption/desorption processes of oxygen molecules on the channel surface, promoted by the applied gate voltage.engjournal article1862-6270https://dx.doi.org/10.1002/pssr.202500104https://onlinelibrary.wiley.com/doi/10.1002/pssr.202500104open access538.9621.382620.3Anticlockwise hysteresisField effect transistorsMolybdenum oxideThermal annealingTwo-dimensional materialsFísica de materiales2211 Física del Estado Sólido3307.14 Dispositivos Semiconductores