Marcano, N.Sangiao, S.Magén, C.Morellon, L.Ibarra,, M. R.Plaza, M.Pérez García, Lucas2023-06-202023-06-202010-09-291098-012110.1103/PhysRevB.82.125326https://hdl.handle.net/20.500.14352/42770©2010 The American Physical Society. This work was supported by Spanish Ministry of Science (through Projects No. MAT2007-65965-C02-02) and No. MAT2008-06567-C02 including FEDER funding, the Aragón Regional Government and the Universidad Complutense de Madrid. N.M. and S.S. acknowledge financial support from Spanish CSIC (JAE program) and Spanish MEC (FPU program). M.P. acknowledges Comunidad de Madrid and European Social Fund for financial support. The authors are especially thankful to I.Rivas, R. Valero, L. Casado, and R. Córdoba for assistance with optical lithography, XRD and lamellae preparation.We have investigated the magnetotransport properties of ultrathin films of Bi grown on thermally oxidized Si(001) substrates with thickness ranging from 10 to 100 nm at temperatures down to 2 K and in magnetic fields up to 90 kOe. Remarkable differences both in temperature and field dependence of the Hall resistivity are found for the films with thickness above and below 20 nm. These observations can be explained due to the presence of surface states, which play an important role in determining the electronic transport properties of the thinnest films. The estimated surface carrier density 4 x 10^(13) cm^(-2) at room temperature correlates well with that recently reported from angle-resolved photoemission spectroscopy on ultrathin Bi(001) films.engjournal articlehttp://dx.doi.org/10.1103/PhysRevB.82.125326https://journals.aps.orgopen access538.9To-semiconductor transitionThin-filmsFísica de materialesFísica del estado sólido2211 Física del Estado Sólido