Castro, MarioSanchez, A.Domínguez-Adame Acosta, Francisco2023-06-202023-06-202000-03-011098-012110.1103/PhysRevB.61.6579https://hdl.handle.net/20.500.14352/59356© 2000 The American Physical Society. This work was supported by CAM (Madrid, Spain) under Project No. 07N/0034/98 and by DGESIC (Spain) under Project No. PB96-0119. The authors wish to thank T. Rodríguez, A. Rodríguez, J. Olivares, and C. Ballesteros for simulating dicussions on experimental issues.We propose a simple, versatile, and fast computational model to understand the deviations from the well-known Kolmogorov-Johnson-Mehl-Avrami kinetic theory found in metal recrystallization and amorphous semiconductor crystallization. Our model describes in detail the kinetics of the transformation and the grain size distribution of the product material, and is in good agreement with the available experimental data. Other morphological and kinetic features amenable of experimental observation are outlined, suggesting directions for further validation of the model.engjournal articlehttp://dx.doi.org/10.1103/PhysRevB.61.6579http://journals.aps.orgopen access538.9Avrami KineticsGrowthNucleationRecrystallizationSiliconFilmsFísica de materiales