Nogales Díaz, EmilioMéndez Martín, María BianchiPiqueras De Noriega, Francisco JavierGarcía, J. A.2023-06-202023-06-202009-03-180957-448410.1088/0957-4484/20/11/115201https://hdl.handle.net/20.500.14352/44099© 2009 IOP 1 Publishing Ltd. This work has been supported by MEC (Project MAT 2006-01259).Cathodoluminescence and photoluminescence techniques have been used to investigate room temperature light emission from ß-Ga_2O_3:Eu nanostructures, which were obtained by two methods. In one of them, a mixture of Ga_2O_3/Eu2O3 powders was used as precursor material and annealed under an argon flow. In the other one, undoped ß-Ga2O3 nanostructures were first obtained by thermal oxidation of metallic gallium and europium was subsequently incorporated by a diffusion process. Room temperature luminescence at 610 nm due to Eu^(3+) intraionic transitions from ß-Ga_2O_3: Eu has been observed. Waveguiding of this red emitted light through the structures was shown.engjournal articlehttp://iopscience.iop.org/0957-4484/20/11/115201http://iopscience.iop.orgopen access538.9NanowiresSiliconFísica de materiales