Nogales Díaz, EmilioMéndez Martín, BianchiPiqueras de Noriega, JavierGarcía, J. A.2023-06-202023-06-202009-03-18[1] Huang Y, Duan X F and Lieber C M 2005 Small 1 142 [2] Minot E D, Kelkensberg F, van Kouwen M, van Dam J A, Kouwenhoven L P, Zwiller V, Borgstrom M T, Wunnicke O, Verhiejen M A and Bakker E P A M 2007 Nano Lett. 7 367 [3] Law M, Sirbuly D J, Johnson J C, Goldberger J, Saykally R and Yang P D 2004 Science 305 1269 [4] Nogales E, Garcíaa J A, Méndez B and Piqueras J 2007 Appl. Phys. Lett. 91 133108 [5] Heyden O, Agarwal R and Lieber C M 2006 Nat. Mater. 5 352 [6] Tian B, Zheng X L, Kempa T J, Fang Y, Yu N F, Yu G H, Huang J L and Lieber C M 2007 Nature 449 885 [7] Lu J C, Chang P and Fan Z 2006 Mater. Sci. Eng. R 52 49 [8] Tippins H H 1965 Phys. Rev. A 140 316 [9] Yamaga M, Víllora E G, Shimamura K, Ichinose N and Honda M 2003 Phys. Rev. B 68 155207 [10] Zhou X T, Heigl F, Ko J Y P, Murphy M W, Zhou J G, Regier T, Blyth R I R and Sham T K 2007 Phys. Rev. B 75 125303 [11] Nogales E, Méndez B and Piqueras J 2005 Appl. Phys. Lett. 86 113112 [12] Víllora E G, Shimamura K, Ujiie T and Aoki K 2008 Appl. Phys. Lett. 92 202120 [13] Binet L and Gourier J 1998 J. Phys. Chem. Solids 59 1241 [14] Kenyon A J 2005 Semicond. Sci. Technol. 20 R65 [15] Yu D P, Bubendorff J L, Zhou J F, Leprince-Wang Y and Troyon M 2002 Solid State Commun. 124 417 [16] Gollakota P, Dhawan A, Wellenius P, Lunardi L M, Muth J F, Saripalli Y N, Peng H Y and Everitt H O 2006 Appl. Phys. Lett. 88 221906 [17] Nogales E, García J A, Méndez B and Piqueras J 2007 J. Appl. Phys. 101 033517 [18] Nogales E, Méndez B and Piqueras J 2008 Nanotechnology 19 035713 [19] Nogales E, García J A, Méndez B, Piqueras J, Lorenz K and Alves E 2008 J. Phys. D: Appl. Phys. 41 065406 [20] Dierolf V, Sandman C, Zavada J, Chow P and Hertog B 2004 J. Appl. Phys. 95 5464 [21] Currie M J, Mapel J K, Heidel T D, Goffri S and Baldo J A 2008 Science 321 2260957-448410.1088/0957-4484/20/11/115201https://hdl.handle.net/20.500.14352/44099© 2009 IOP 1 Publishing Ltd. This work has been supported by MEC (Project MAT 2006-01259).Cathodoluminescence and photoluminescence techniques have been used to investigate room temperature light emission from ß-Ga_2O_3:Eu nanostructures, which were obtained by two methods. In one of them, a mixture of Ga_2O_3/Eu2O3 powders was used as precursor material and annealed under an argon flow. In the other one, undoped ß-Ga2O3 nanostructures were first obtained by thermal oxidation of metallic gallium and europium was subsequently incorporated by a diffusion process. Room temperature luminescence at 610 nm due to Eu^(3+) intraionic transitions from ß-Ga_2O_3: Eu has been observed. Waveguiding of this red emitted light through the structures was shown.engjournal articlehttp://iopscience.iop.org/0957-4484/20/11/115201http://iopscience.iop.orgopen access538.9NanowiresSiliconFísica de materiales