García Hernansanz, RodrigoPérez Zenteno, Francisco JoséDuarte Cano, SebastiánCaudevilla Gutiérrez, DanielAlgaidy, SariGarcía Hemme, EricOlea Ariza, JavierPastor Pastor, DavidPrado Millán, Álvaro DelSan Andrés Serrano, EnriqueMartil De La Plaza, IgnacioRos, EloyPuigdollers, JoaquimOrtega, PabloVoz, Cristobal2023-11-172023-11-172023R. García-Hernansanz, F. Pérez-Zenteno, S. Duarte-Cano, D. Caudevilla, S. Algaidy, E. García-Hemme, J. Olea, D. Pastor, A. del Prado, E. S. Andrés, I. Mártil, E. Ros, J. Puigdollers, P. Ortega, and C. Voz, IEEE Journal of Photovoltaics 13, 656 (2023).2156-338110.1109/JPHOTOV.2023.3295494https://hdl.handle.net/20.500.14352/88806In this article, we study the effect of the inversion charge ( Q _inv ) in a solar cell based on the hole-selective characteristic of substoichiometric molybdenum oxide (MoO_x ) and vanadium oxide (VO_x ) deposited directly on n-type silicon. We measure the capacitance–voltage ( C – V ) curves of the solar cells at different frequencies and explain the results taking into account the variation of the space charge and the existence of Q_inv in the c-Si inverted region. The high-frequency capacitance measurements follow the Schottky metal–semiconductor theory, pointing to a low inversion charge influence in these measurements. However, for frequencies lower than 20 kHz, an increase in the capacitance is observed, which we relate to the contribution of the inversion charge. In addition, applying the metal–semiconductor theory to the high-frequency measurements, we have obtained the built-in voltage potential and show new evidence about the nature of the conduction process in this structure. This article provides a better understanding of the transition metal oxide/n-type crystalline silicon heterocontact.engjournal article2156-3403http://dx.doi.org/10.1109/JPHOTOV.2023.3295494https://ieeexplore.ieee.org/abstract/document/10190068open access538.9Inversion chargeHole selectiveTunnelingConduction processSiliconFrequency measurementPhotovoltaic cellsCapacitanceCapacitance measurementBehavioral sciencesTemperature measurementFísica del estado sólido2211 Física del Estado Sólido