Rosado Vélez, JaimeAranda, V. M.Blanco Ramos, FranciscoArqueros Martínez, Fernando2023-06-182023-06-182015-07-010168-900210.1016/j.nima.2014.11.080https://hdl.handle.net/20.500.14352/24058© 2014 Elsevier. This work was supported by MINECO (FPA2012-39489-C04-02) and CONSOLIDER CPAN CSD2007-42.An experimental method to characterize the crosstalk and afterpulsing in silicon photomultipliers has been developed and applied to two detectors fabricated by Hamamatsu. An analytical model of optical crosstalk that we presented in a previous publication has been compared with new measurements, confirming our results. Progresses on a statistical model to describe afterpulsing and delayed crosstalk are also shown and compared with preliminary experimental data. (C) 2014 Elsevier B.V. All rights reserved.engjournal articlehttp://dx.doi.org/10.1016/j.nima.2014.11.080http://arxiv.org/abs/1409.4564http://www.sciencedirect.com/open access539.1Silicon photomultipliersCrosstalkAfterpulsingFísica nuclear2207 Física Atómica y Nuclear