Nogales Díaz, EmilioSánchez, B.Méndez Martín, María BianchiPiqueras De Noriega, Francisco Javier2023-06-202023-06-202009-040749-603610.1016/j.spmi.2008.11.027https://hdl.handle.net/20.500.14352/44098© 2008 Elsevier Ltd.. This work was supported by MEC (Project MAT 2006-01259) International Workshop on Beam Injection Assessment of Microstructure in Semiconductors (9. 2008-2009. Toledo).Isoelectronic (In, Al) doped gallium oxide nanowires have been grown by a vapour solidification process. XRD and TEM were used for their structural characterization. The morphology and optical properties of the In(Al)-doped Ga_2O_3 nanowires have been investigated by means of the secondary electrons and cathodoluminescence (CL) techniques in the SEM. Red and blue-UV emission bands appear as complex bands and their components are influenced by the presence of In or Al, leading to a blue-shift of the blue-UV band usually observed in undoped gallium oxide. These In and Al related changes in the luminescence features of doped Ga_2O_3 nanostructures are discussed.engjournal articlehttp://www.sciencedirect.com/science/journal/07496036/45/4-5http://www.sciencedirect.comopen access538.9LuminescenceBeta-Ga_2O_3Física de materiales