González Díaz, GermánBlanco, N.Artús, L.Cuscó, R.Ibáñez, J.2023-06-202023-06-201999-08-150163-182910.1103/PhysRevB.60.5456https://hdl.handle.net/20.500.14352/59344© The American Physical Society. The authors would like to acknowledge the Spanish Ministerio de Educación y Cultura for financial support.We have studied LO phonon-plasmon coupled modes by means of Raman scattering in n-InP for carrier densities between 6x10(16) and 1x10(19) cm(-3). A line-shape theory based on the Lindhard-Mermin dielectric function that takes into account the nonparabolicity of the InP conduction band as well as temperature and finite wave-vector effects is used to fit the Raman spectra and extract accurate values of the electron density. The results obtained from the Lindhard-Mermin model are compared with the charge density determinations based on the Drude and the hydrodynamical models, and the approximations involved in these models are discussed.engjournal articlehttp://dx.doi.org/10.1103/PhysRevB.60.5456http://journals.aps.org/open access537P-Type GaAsCarrier ConcentrationConduction-BandGallium NitrideSpectraPhotoluminescenceNonparabolicityCrystalsGaP.ElectricidadElectrónica (Física)2202.03 Electricidad