Martil De La Plaza, IgnacioGonzález Díaz, Germán2023-06-202023-06-202007-04-300003-695110.1063/1.2734474https://hdl.handle.net/20.500.14352/51109© 2007 American Institute of Physics. This work has been supported by the Spanish Ministry of Education and Science under Contract No. MAT2004-0664. The work performed by the United States Air Force Research Laboratory at Hanscom Air Force Base was partially supported by the Air Force Office of Scientific Research.Micro-Raman measurements were performed to study the nitrogen-related modes in ZnO samples implanted with N+. The two stable N isotopes, N-14 and N-15, were implanted. Distinct peaks at 277 and 512 cm(-1) are observed irrespective of the implanted isotope, both before and after rapid thermal annealing. The insensitivity of the mode frequencies to the implanted isotope rules out the explanation of these modes as local vibrational modes involving N motion. These modes were not detected in ZnO samples implanted with Zn+, O+, or P+, which suggests that they may be associated with distortions/defects favored by the presence of N.engjournal articlehttp://dx.doi.org/10.1063/1.2734474http://scitation.aip.orgopen access537Local Vibrational-ModesRaman-ScatteringDoped ZnOImpuritiesDevicesGa.ElectricidadElectrónica (Física)2202.03 Electricidad