Herrera Zaldiva, M.Fernández Sánchez, PalomaPiqueras de Noriega, JavierSukhoveyev, W.Ivantsov, V. A.Shreter, Y. G.2023-06-202023-06-202000-071. S. Nakamura, T. Mukai, M. Senoh: Appl. Phys. Lett. 64, 1687 (1994) 2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto: Jpn. J. Appl. Phys., Part 1 35, L74 (1996) 3. F.A. Ponce, D.P. Bour, W. Götz, P.J.Wright: Appl. Phys. Lett. 68, 57 (1996) 4. C. Trager-Cowan, K.P. O´Donnell, S.E. Hooper, C.T. Foxon: Appl. Phys. Lett. 68, 355 (1996) 5. A. Cremades, J. Piqueras, C. Xavier, T. Monteiro, E. Pereira, B.K. Meyer, D.M. Hofmann, S. Fischer: Mater. Sci. Eng. B 42, 230 (1996) 6. S.J. Rosner, E.C. Carr, M.J. Ludowise, G. Gorolani, H.I. Erikson: Appl. Phys. Lett. 70, 420 (1997) 7. M. Herrera-Zaldivar, P. Fern´andez, J. Piqueras: J. Appl. Phys. 83, 462 (1998) 8. M. Herrera-Zaldivar, P. Fern´andez, J. Piqueras: J. Appl. Phys. 83, 2796 (1998) 9. S.D. Lester, F.A. Ponce, M.G. Crawford, D.A. Steigerwald: Appl. Phys. Lett. 66, 1249 (1995) 10. F.A. Ponce, J.W. Steeds, C.D. Dyer, D.G. Pitt: Appl. Phys. Lett. 69, 2650 (1996) 11. S. Rendakova, V. Ivantsov, V. Dmitriev: in Abstracts of the International Conference on Silicon Carbide, III-nitrides and Related Materials ICSCIII-N’97, (Stockholm, Sweden p. 237 1997) 12. V.A. Ivantsov, V.A. Sukhoveyev, V.A. Dmitriev: Mater. Res. Soc. Symp. Proc. 468, p. 143 (1997). 13. M. Herrera-Zaldivar, P. Fern´andez, J. Piqueras: Semicond. Sci. Technol. 13, 900 (1998) 14. S. Christiansen, M. Albrecht, W. Dorsch, H.P. Strunk, A. Pelzmann, M. Mayer, M. Kamp, .J. Ebeling, C. Zanotti-Fregonara, G. Salviatti: Mat. Sci. Eng. B 43, 243 ( 1997) 15. D.M. Hofmann, D. Kovalev, G. Stende, B.K. Meyer, A. Hoffmann, L. Eckey, R. Heitz, T. Detchprom, A. Amano, A. Akasaki: Phys. Rev. B 52, 16 072 (1995)0947-839610.1007/PL00021091https://hdl.handle.net/20.500.14352/59134© Springer-Verlag 2000. This work has been supported by DGES (Project PB96-0639). The Russian Fund for Basic Research (Project 98-01-01084) is acknowledged.Cathodoluminescence (CL) in the scanning electron microscope has been applied to study the luminescence emission of GaN single crystals grown by LPE methods. CL spectra show the presence of near band edge and of yellow emissions. The latter has been found to be mainly related to rows of hillocks formed at the growth steps. The origin of the yellow luminescence is discussed PACS: 78.60Hk; 71.55Eq.engjournal articlehttp://link.springer.com/article/10.1007/PL00021091http://link.springer.comrestricted access538.9Light-Emitting-DiodesCathodoluminescenceFilmsFísica de materiales