Martil De La Plaza, Ignacio2023-06-202023-06-201999-07-300040-609010.1016/S0040-6090(99)00166-2https://hdl.handle.net/20.500.14352/59264© Elsevier Science Ireland Ltd. The authors like to thank J. Messarosch, G. Fehlauer, H. Baumgärtner, F. Kaesen, H. Geiger, V.R. Rao and T. Pompl for their assistance in electrical measurements, sample preparation and fruitful discussions. The expertise of J. Ramm, E. Beck and R. Slepicka of Balzers AG is greatfully acknowledged. This work was supported by the BMBF under grant no. BA-672. One of the authors, A. Strass, likes to thank the German Academic Exchange Service (DAAD) for financial assistance during his scientific stay at the Universidad de Chile.We developed and tested three MBE-compatible processes for the deposition of high-quality low-temperature silicon oxides and oxynitrides in the ultra high vacuum at substrate temperatures between room temperature and 500 degrees C, gas enhanced evaporation (GEE), plasma enhanced evaporation (PEE) and plasma enhanced oxidation (PEO). The deposited layers were thoroughly investigated and compared with respect to their electrical, optical and stoichiometrical properties by means of ellipsometry, mechanical profilometry, Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), Rutherford backscattering (RBS), Fourier transform infrared ((FTIR) spectroscopy, and by electrical measurements (I-V, C-V) on MOS structures. A model of the growth mechanism for each of the processes is suggested.engjournal articlehttp://dx.doi.org/10.1016/S0040-6090(99)00166-2http://www.sciencedirect.comopen access537Chemical-Vapor-DepositionMolecular-Beam EpitaxyFilmsSiHydrogenInterface.ElectricidadElectrónica (Física)2202.03 Electricidad