Application of scanning electron acoustic microscopy to the characterization of n-type and semiinsulating GaAs

Méndez Martín, María BianchiPiqueras De Noriega, Francisco Javier2023-06-202023-06-201992-03-160003-695110.1063/1.107485https://hdl.handle.net/20.500.14352/58995©2001. All Rights Reserved. This work was supported by the Volkswagen Foundation, by the Comision Interministerial de Ciencia y Tecnologia (Project MAT 90-47) and by DGICYT-DAAD. The authors thank Wacker-Chemitronic (Doctor K. Lohnert ) for providing the samples.A series of GaAs wafers with different doping levels and electrical resistivity has been used to investigate the scanning electron acoustic microscopy (SEAM) application to the characterization of this material. It has been found that SEAM is particularly useful to characterize semi-insulating GaAs as compared with n-type material. The SEAM signal generation mechanisms in GaAs are discussed.engApplication of scanning electron acoustic microscopy to the characterization of n-type and semiinsulating GaAsjournal articlehttp://dx.doi.org/10.1063/1.107485http://scitation.aip.org/open access538.9SignalFísica de materiales