Plaza, J. L.Hidalgo Alcalde, PedroMéndez Martín, BianchiPiqueras de Noriega, JavierCastaño, J. L.2023-06-202023-06-202001-04-24[1] S. Coffa, A. Polman, R.N. Schwartz, Rare Earth Doped Semiconductors II, MRS Symp. Proc. 422, Materials Research Society, Pittsburg, 1996. [2] A.R. Zanatta, L.A.O. Nunes, Appl. Phys. Lett. 71 (25) (1997) 3679. [3] L.F. Zakharenkov, V.A. Kasatkin, F.P. Kesamanly, B.E. Samorukov, M.A. Sokolova, Sov. Phys. Semicond. 15 (1981) 946. [4] V.A. Kasatkin, F.P. Kesamanly, V.G. Makarenkov, V.F. Masterov, B.E. Samorukov, Sov. Phys. Semicond. 14 (1980) 1092. [5] V.A. Kasatkin, F.P. Kesamanly, B.E. Samorukov, Sov. Phys. Semicond. 15 (1981) 352. [6] H. Ennen, J. Schneider, J. Electron. Mater. 14A (1985) 115. [7] P. Hidalgo, B. Me´ndez, J. Piqueras, J. Plaza, E. Diéguez, Semic. Sci. Technol. 13 (1998) 1431. [8] J.L. Plaza, P. Hidalgo, B. Me´ndez, J. Piqueras, J.L. Castaño, E. Diéguez, J. Cryst. Growth 198:199 (1999) 379. [9] J.L. Plaza, P. Hidalgo, B. Me´ndez, J. Piqueras, E. Diéguez, Mat.Sci. Eng. B71 (2000) 282. [10] M. Hong, M. Passlack, J.P. Mannaerts, J. Kwo, S.N.G. Chu, N. Moriya, S.Y. Hou, V.J. Fratello, J. Vac. Sci. Technol. B14 (1996) 2297. [11] M. Passlack, M. Hong, J.P. Mannaerts, J. Kwo, R.L. Opila, S.N.G. Chu, N. Moriya, F. Ren, IEEE Trans. Electron. Devices 44 (1997) 214. [12] M. Hong, Z.H. Lu, J. Kwo, A.R. Kortan, J.P. Mannaerts, J.J. Krajewski, K.C. Hsieh, L.J. Chou, K.Y. Cheng, Appl. Phys. Lett. 76 (3) (2000) 312. [13] H.C. Casey, Jr, M.B. Panish, Heterostructure Lasers, Part B, Academic Press, London, 1978. [14] P.S. Dutta, K.S. Sangunni, H.L. Bhat, V. Kumar, J. Cryst. Growth 141 (1994) 44.0921-510710.1016/S0921-5107(00)00711-Xhttps://hdl.handle.net/20.500.14352/59057© 2001 Elsevier Science B.V. Spring Meeting of the European-Materials-Research-Society (2000. Strasbourg, Francia). This work has been supported by CICYT under the project ESP-98-1340.In this work pure and Gd-doped GaSb ingots with different dopant concentrations were grown by the Bridgman Method. The compositional and electrical analysis carried out on these materials have shown the dependence of these results on the initial dopant concentration. The analysis have revealed the presence of inclusions which have been identified as Gd-Sb precipitates. The doped material was found to be p-type with a maximum value of the carrier density at the central region of the ingots. It has been also demonstrated that the Gd enhances the A band emission reducing the band-gap emission.engjournal articlehttp://dx.doi.org/10.1016/S0921-5107(00)00711-Xhttp://www.sciencedirect.comopen access538.9Gallium-PhosphideInterfaceGaasErFísica de materiales