Díaz-Guerra Viejo, CarlosVincent, J.Piqueras De Noriega, Francisco JavierBermudez, V.Diéguez, E.2023-06-202023-06-202005-01-150021-897910.1063/1.1834727https://hdl.handle.net/20.500.14352/51132© 2005 American Institute of Physics. This work has been carried out in the frame of the Fifth Framework European Programme for research, HPRN-CT 2001-00199 project. Support from MCYT through Project Nos. MAT2003-00455 and MAT2003-09873-C02-01 is also acknowledged..The radiative recombination properties of Se-doped GaSb crystals grown by the Bridgman method have been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. A CL band centered at about 765 meV, not previously observed in undoped GaSb, is generally the dominant emission. CL spectra recorded under different excitation conditions suggest that this band can be attributed to a Se-related level-to-band transition. The spatial distribution of the 765 meV emission, as observed in the CL images, indicates an inhomogeneous Se distribution in the material.engjournal articlehttp://dx.doi.org/10.1063/1.1834727http://scitation.aip.orgopen access538.9Auger RecombinationBulk Gasb. PhotoluminescenceDefectsPhysicsCellsGaas Auger RecombinationGaas Auger RecombinationGaasFísica de materiales