Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon

Martil De La Plaza, IgnacioGonzález Díaz, GermánSan Andrés Serrano, Enrique2023-06-202023-06-2020050-7803-8810-010.1109/SCED.2005.1504303https://hdl.handle.net/20.500.14352/53369Spanish Conference on Electron Devices (5. 2005. Tarragona, España). © 2005 IEEE.A comparison between interface quality of several temperatures thermal annealed HPRS TiO2 films and 750 degrees C annealed ALD TiO2 films has been established. Our attention has been focused on the interfacial state and disordered induced gap state densities. From our results, HPRS films submitted to in situ 900 degrees C thermal annealing in oxygen atmosphere exhibit the best characteristics, with D-it, density being the lowest value measured in this work (5 - 6 x 10(11) cm(-2) eV(-1)), and undetectable conductance transients within our experimental limits.engInterface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on siliconbook parthttp://dx.doi.org/10.1109/SCED.2005.1504303http://ieeexplore.ieee.orgopen access537V CharacteristicsTiO2DioxideGrowth.ElectricidadElectrónica (Física)2202.03 Electricidad