Hidalgo Alcalde, PedroMéndez Martín, María BianchiPiqueras De Noriega, Francisco JavierDutta, P: S.2023-06-202023-06-2020001-55899-496-3https://hdl.handle.net/20.500.14352/60813©Materials Research Society. Symposium on Optical Microstructural Characterization of Semiconductors held at the 1999 MRS Fall Meeting (1999. Boston)GaSb p-n junctions formed by Zn diffusion in Te-doped n-GaSb single crystalline wafers have been characterized by cathodoluminescence (CL) microscopy and by scanning tunneling spectroscopy. CL plane-view observations of the Zn diffused side enable to study the homogeneity of the diffusion treatment. Spectra recorded by current imaging tunneling spectroscopy (CITS) in the n and p sides of the junction, clearly show the respective conductive behaviour and provide information on the local surface band gaps. Results are related to the diffusion profile measured by secondary ion mass spectrometry (SIMS).book parthttp://dx.doi.org/10.1557/PROC-588-239http://journals.cambridge.orgmetadata only access538.9Gallium AntimonideDoped GasbFísica de materiales