Martil De La Plaza, IgnacioGonzález Díaz, GermánPrado Millán, Álvaro DelSan Andrés Serrano, Enrique2023-06-202023-06-202007-11-050003-695110.1063/1.2811958https://hdl.handle.net/20.500.14352/51104© 2007 American Institute of Physics. This work was partially supported by the Spanish M.E.C. under TEC2004 1237/MIC and TEC2007/63318 contracts.High-k stacks formed by chemical-vapor-deposited SiN and high-pressure sputtered HfO2 in either O-2 or Ar atmosphere have been studied. The introduction of a SiN layer is proposed to prevent the uncontrollable SiO2 growth while sputtering. The formation of Si-O bonds after the sputtering of the HfO2 film in O-2 atmosphere was observed by infrared spectroscopy. Optical diagnosis of the plasma demonstrated a high density of O radicals in the system when working with O-2. The small radius and high reactivity of these O radicals are the source of the SiN oxidation. However, the structure of the SiN film is preserved during Ar sputtering.engjournal articlehttp://dx.doi.org/10.1063/1.2811958http://scitation.aip.orgopen access537Thin-Films.ElectricidadElectrónica (Física)2202.03 Electricidad