Díaz-Guerra Viejo, CarlosMitric, A.Piqueras De Noriega, Francisco JavierDuffar, T.2023-06-202023-06-202009-040749-603610.1016/j.spmi.2008.11.006https://hdl.handle.net/20.500.14352/44223© 2008 Elsevier Ltd. All rights reserved. International Workshop on Beam Injection Assessment of Microstructure in Semiconductors (9. 2008 -2009. Toledo, España). This work was carried out in the framework of the Fifth Framework European Programme for research, Project HPRN-CT2001-00199. Support from MCYT through Project MAT2006-01259 is also acknowledged.Cathodoluminescence (CL) in the scanning electron microscope and wavelength dispersive X-ray microanalysis (WDX) have been used to assess the homogeneity of a whole Te-doped In_xGa_(1-x)Sb ingot grown by the vertical Bridgman method under an alternating magnetic field. In particular, WDX has been used to determine the chemical composition of the ingot along the growth axis and several radial directions, while CL has been used to investigate the effective incorporation of In into the alloy, the nature and distribution of extended defects influencing the luminescence of the material and the shape evolution of the growth interfaces along the growth axis. CL spectroscopy reveals that doping with Te influences the band gap energy of this ternary compound through the Moss-Burstein effect.engjournal articlehttp://dx.doi.org/10.1016/j.spmi.2008.11.006http://www.sciencedirect.comrestricted access538.9Gallium AntimonideGasbCrystalsPhotoluminescenceFísica de materiales